Tuesday, May 15, 2007

WISDOM of PAOLO GARGINI (process technology)

I thought this series of quotes from Paolo, was very apt in guiding successful device technology development, or in fact any R&D effort which is complicated and substantive in technical challenge.

Oftentimes, people who ignore these words of wisdom, or sadder yet don't understand the nuggets within, find poor success in solving technology development challenges, and will often not comprehend the organizational root causes of project or team failure.

The best teams in development are often fluid and agile, taking this wise advice to heart.


5 (wise) LESSONS OF TECHNOLOGY DEVELOPMENT by
PAOLO GARGINI

1] The Right Things may Happen for the Wrong Reasons

2] Predictors of Engineering Limits have Always been Proven Wrong by the Right Improvements

3] It Would be Wrong to Believe that the Right Fundamental Limits Don’t Exist

4] It is Wise to Look For The Right Solutions before Things Start to go Wrong

5] It Would be Wrong to Delay Taking Action and not Doing the Right Thing at the Right Time
............................

quote from PAOLO GARGINI
(re: process technology)
Director of Intel Technology (process) Development Strategy
Intel Fellow, and Chairman of ITRS - Intl Tech Roadmap Semiconductors

Mine own edits to this are -> Try your best, hang in there and think about assumptions that might be able to be circumvented, where presently assumed to be impenetrable barriers. This is the essence of 2], and while one cannot bank on unusual solutions magically appearing that destroy assumptions of limits, one can look passively, actively, like a crouching tiger, or a ravenous reader, or experiment prolificly and efficiently, to find the fix to one's ills, that ails one's quest.

Unspoken here is that true breakthroughs, development thereof, and recognizing them when they might have been staring you in the face for some time, is a bit of a soft art. Overmanage and tightly control dissent, and you tightly often squeeze your endeavor into a rather tight corner...

An example of this was when an older researcher was almost grudgingly accepted to find a corner to do some work in a lab of a rather prestigious research scientist, and he proved key to the concepts to enable laser based microcantilever deflection sensing so critical to practical AFM - atomic force microscopes. All from attempts to test laser rangefinding to the moon on the lab ceiling, we now see molecules and atoms like never before.

Apparently complementary Heterostructure FETS (or something similar) were stumbled upon because of an error in the intended MBE EPI epitaxy layer growth sequence.

The major single yield improvement for the worlds first DRAM, The Intel 1101 256bit pMOS DRAM, occurred when a bright, humble, yet confident engineer, Tom Rowe, in the early 1970s, in the face of a plant wide edict by Gordon Moore to prohibit ANY and ALL process experiments on the 1101 Dram process (then running a miserable ~5-10% yield ), was ignored in secret by Tom Rowe.

Tom then found a means to >5x increase yield of the worlds first DRAM using, as Les Vadasz called it, a SOOPER DIP, which was Tom Rowe's secret wet etch chemical recipe to clear the metal contact openings without destroying the CVD deposited Field Oxide... And yes that was a Sooper Dip apparently and it both saved the day and led to the commercial success of Intel's efforts in fielding the first MOS Dram memories. Tom is a hell of a guy, fun to talk with and a kind people person. And a great raconteur...

Overconstrain technical innovation and problem solving, overcontrol and we all lose. Work your tail off and get a little loose, and we all win.

Work hard and think like the devil.

Paolo is not a personal friend, but I worked at Intel Livermore '84-86 when he headed Intel Logic TD......quoted from Paolo's 2004 Semicon West presentation

Originally posted 10/16/05
bumped up to refresh on May 15th 2007, as apt as ever.


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